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BiBTeX citation export for WEPA68: Record Quantum Efficiency from Superlattice Photocathode for Spin Polarized Electron Beam Production

@inproceedings{biswas:napac2022-wepa68,
  author       = {J.P. Biswas and L. Cultrera and S.D. Hawkins and K. Kisslinger and J.F. Klem and S.R. Lee and W. Liu and J. Skarita and E. Wang},
% author       = {J.P. Biswas and L. Cultrera and S.D. Hawkins and K. Kisslinger and J.F. Klem and S.R. Lee and others},
% author       = {J.P. Biswas and others},
  title        = {{Record Quantum Efficiency from Superlattice Photocathode for Spin Polarized Electron Beam Production}},
& booktitle    = {Proc. NAPAC'22},
  booktitle    = {Proc. 5th Int. Particle Accel. Conf. (NAPAC'22)},
  pages        = {784--787},
  eid          = {WEPA68},
  language     = {english},
  keywords     = {electron, cathode, polarization, lattice, distributed},
  venue        = {Albuquerque, NM, USA},
  series       = {International Particle Accelerator Conference},
  number       = {5},
  publisher    = {JACoW Publishing, Geneva, Switzerland},
  month        = {10},
  year         = {2022},
  issn         = {2673-7000},
  isbn         = {978-3-95450-232-5},
  doi          = {10.18429/JACoW-NAPAC2022-WEPA68},
  url          = {https://jacow.org/napac2022/papers/wepa68.pdf},
  abstract     = {{Electron sources producing highly spin-polarized electron beams are currently possible only with photocathodes based on GaAs and other III-V semiconductors. GaAs/GaAsP superlattice (SL) photocathodes with a distributed Bragg reflector (DBR) represent the state of the art for the production of spin-polarized electrons. We present results on a SL-DBR GaAs/GaAsP structure designed to leverage strain compensation to achieve simultaneously high QE and spin polarization. These photocathode structures were grown using molecular beam epitaxy and achieved quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near bandgap photon energies.}},
}