|WEPA68||Record Quantum Efficiency from Superlattice Photocathode for Spin Polarized Electron Beam Production||784|
Funding: The work is supported by Brookhaven Science Associates, LLC under Contract DESC0012704 with the U.S. DOE. SNL is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
Electron sources producing highly spin-polarized electron beams are currently possible only with photocathodes based on GaAs and other III-V semiconductors. GaAs/GaAsP superlattice (SL) photocathodes with a distributed Bragg reflector (DBR) represent the state of the art for the production of spin-polarized electrons. We present results on a SL-DBR GaAs/GaAsP structure designed to leverage strain compensation to achieve simultaneously high QE and spin polarization. These photocathode structures were grown using molecular beam epitaxy and achieved quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near bandgap photon energies.
|Poster WEPA68 [4.506 MB]|
|DOI •||reference for this paper ※ doi:10.18429/JACoW-NAPAC2022-WEPA68|
|About •||Received ※ 20 July 2022 — Revised ※ 02 August 2022 — Accepted ※ 07 August 2022 — Issue date ※ 10 August 2022|
|Cite •||reference for this paper using ※ BibTeX, ※ LaTeX, ※ Text/Word, ※ RIS, ※ EndNote (xml)|